New graphene-based flash memory writes data in 400 picoseconds, shattering all speed records

What just happened? Researchers at Fudan University in Shanghai have unveiled a flash memory device that breaks speed records once thought unreachable. Dubbed "PoX," the device can program data in just 400 picoseconds, or four hundred trillionths of a second, making it the fastest semiconductor charge storage device ever recorded. To put this achievement into perspective, PoX can perform 25 billion operations per second – surpassing the previous world record for similar technology by a factor of 100,000. The implications are profound, particularly for the fast-moving field of artificial intelligence. As AI models continue to grow in complexity and scale, their soaring computational demands are pushing existing memory technologies to their limits. Traditional volatile memories like static RAM and dynamic RAM offer impressive speeds – typically writing data in under a nanosecond – but they lose all stored information when power is cut. Non-volatile memories like flash storage retain d ... Read full article.