Subnanosecond Flash Memory

To further explore the factors that make the injection efficiency of 2D materials transistors better than that of silicon transistors, we employed a quasi-2D model30,31 for analysis. As Fig. 2a shows, the structure of this physical model is consistent with that of our fabricated 2D transistor. The x direction is defined as the channel surface to gate vertically and the y direction is defined as source to drain horizontally, where the zero point of the x and y axes is the channel surface and source, respectively. V(y) is the horizontal potential in the channel, t ch is the channel thickness, E x and E y are the vertical and horizontal electric field in the channel, respectively, E dielectric is the vertical electric field in the dielectric, and E sat and V DSsat are the E y and V(y) at the leading edge of the velocity saturation region. Different from the triangle pinch-off region in the conventional bulk silicon, the thin body (t ch → 0) of the 2D material channel results in a square p ... Read full article.