In-Memory Ferroelectric Differentiator

FeRAM based on passive crossbar array of ferroelectric P(VDF-TrFE) capacitors Ferroelectricity is a property of certain materials that exhibit spontaneous electric polarization that can be reversed by the external electric field14,15,16,17,18. Displacement currents due to polarization reversal can be detected when the applied electric field is higher than the coercive field13,19. The non-volatile nature of ferroelectric materials, coupled with their ability to gradually change polarization states in response to external stimuli, makes them excellent candidates for simulating biomimetic synaptic devices20,21,22,23 and for constituting in-memory computing hardware24,25,26,27,28,29,30,31. P(VDF-TrFE) is a leading organic ferroelectric material known for its superior ferroelectric characteristics, robust chemical stability and biocompatibility32,33,34. In this study, solution-processed ferroelectric P(VDF-TrFE) thin films with a molar composition of 70:30 are used to construct devices for ... Read full article.