Integrated memristor for mitigating reverse-bias in perovskite solar cells

Schematic top view image of the Memsol demonstrating two possibilities of memristor integration into our solar cell layout where in (a) the memristor is placed within the solar-cell active area and in (b) the memristor is placed adjacent to the solar-cell active area. Panels (c–g) present 5 μm-wide cross-sectional SEM windows of a Memsol device with the memristor placed within the solar cell active area (a), sequentially moving from left to right/up to down (from the memristor toward the solar cell), while panel (h) shows the fused image spanning the entire region. For the Memristor cross-sectional SEM image shown in the main text (Fig. 1e), higher brightness and an additional denoising filter were applied to panel (c) to enhance the visibility of the polymeric layer. To show memristor and solar cell in one SEM image, the extension of the transition region (no Ag/PL 177 but SiO) has been minimized to around 10 µm. Commonly, it is larger to avoid any direct contact of the Ag with the solar cell (see Fig. 2 in the main paper). Panels (i and j) present cross sectional SEM image of the Memsol device where memristor (i) placed adjacent to the solar cell active area (j). Compared to the cross-sectional SEM image in Fig. 1e, a clear structural difference is observed in the memristive region, where the silver bottom electrode of this configuration is deposited on the region of the substrate, where ITO has been removed.