GoKawiilWe thank M. Shankar, R. Comin and K.-M. Kim for valuable discussions during the initial Raman measurements. We also thank J. Song, L. Fu, X. Qian, Y. He and Z. Wang for insightful discussions. Q.M. and S.-Y.X. acknowledge support from the Center for the Advancement of Topological Semimetals, an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, through the Ames Laboratory (Contract No. DE-AC02-07CH11358, transport measurements). Q.M. acknowledges support from the AFOSR (Grant Nos. FA9550-22-1-0270 and FA9550-24-1-0117, sample fabrication and data analysis). Q.M. also acknowledges support from the ONR (Grant No. N00014-24-1-2102, optical measurements and manuscript preparation) and from the NSF (CAREER Award No. DMR-2143426, equipment upgrades and maintenance). In addition, Q.M. acknowledges support from the AFOSR DURIP (Award No. FA9550-24-1-0077 for the acquisition of equipment used for Raman measurements). Y.Z. acknowledges support from the Max-Planck partner laboratory grant for quantum materials. The research by J.L. was primarily supported by the NSF Materials Research Science and Engineering Center programme through the UT Knoxville Center for Advanced Materials and Manufacturing (Grant No. DMR-2309083). S.D. and Y.W. acknowledge support from the AFOSR Young Investigator Program (Grant No. FA9550-23-1-0153). Simulation results were obtained using the Frontera computing system at the Texas Advanced Computing Center. Frontera is made possible by NSF Award No. OAC-1818253. Bulk single crystals were grown and TaIrTe 4 was characterized at UCLA, which was supported by the US Department of Energy, Office of Science (Award No. DE-SC0021117). K.S.B. acknowledges support from the AFOSR (Award No. FA9550-24-1-0110). The work of B.S. was supported by the grant DE-SC0018675 funded by the US Department of Energy, Office of Science. STM work is supported by the Office of Basic Energy Science, Materials Science and Engineering Division, US Department of Energy (DOE) under Contract No. DE-SC0012704. K.W. and T. Taniguchi acknowledge support from the JSPS (KAKENHI Grant Nos. 21H05233 and 23H02052), the CREST (Grant No. JPMJCR24A5), JST and the World Premier International Research Center Initiative, MEXT, Japan. We also acknowledge that some of the work was carried out in the Boston College cleanroom and nanotechnology facilities. Work by Z.S. was fully completed during his appointment at Boston College, with support from the Swiss National Science Foundation (Grant No. P500PT-206914).
Bistable superlattice switching in a quantum spin Hall insulator
Why This Matters
This research on bistable superlattice switching in a quantum spin Hall insulator advances our understanding of topological materials, potentially enabling more robust and energy-efficient electronic devices. It highlights the ongoing efforts to harness quantum properties for next-generation technologies, impacting both the tech industry and consumers by paving the way for improved quantum computing and spintronic applications.
Key Takeaways
- Demonstrates bistable switching in quantum spin Hall insulators.
- Supports development of energy-efficient, topologically protected electronic devices.
- Involves advanced computational and experimental techniques for material characterization.
Explore topics:
quantum spin hall
superlattice
topological semimetals
ames laboratory
frontera computing
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