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Perpendicular switching of polarization in layered ferroelectrics

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Why This Matters

This research on perpendicular polarization switching in layered ferroelectrics advances our understanding of ferroelectric materials, which are crucial for developing faster, more efficient memory devices and electronic components. The findings could lead to improved data storage technologies and novel electronic applications, benefiting both industry and consumers by enabling more reliable and energy-efficient devices.

Key Takeaways

This work was supported by Kepler Computing. R.R. and S.P. acknowledge the support of the Army Research Office under the ETHOS MURI through cooperative agreement W911NF-21-2-0162 F.G.-O. acknowledges financial support from MSCA-PF 101148906 funded by the European Union and the Fonds de la Recherche Scientifique (FNRS) through the grant FNRS-CR 1.B.227.25F and the Consortium des Équipements de Calcul Intensif (CÉCI) funded by the F.R.S.-FNRS under grant no. 2.5020.11 and the Tier-1 Lucia supercomputer of the Walloon Region, infrastructure funded by the Walloon Region under the grant agreement no. 1910247. S.H. and R.R., acknowledge that this research was partially sponsored by the Army Research Laboratory and was accomplished under Cooperative Agreement Number W911NF-24-2-0100. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the Army Research Laboratory or the U.S. Government. The U.S. Government is authorized to reproduce and distribute reprints for Government purposes, notwithstanding any copyright notation herein. This research used resources of the Advanced Light Source (S.R. and B.A.), a U.S. DOE Office of Science User Facility under contract no. DE-AC02-05CH11231. X.L. acknowledges support from the Rice Advanced Materials Institute (RAMI) at Rice University as a RAMI Postdoctoral Fellow. X.L. and Y.H. acknowledge support from NSF (FUSE-2329111 and CMMI-2239545) and Welch Foundation (C-2065). X.L. and Y.H. acknowledge the Electron Microscopy Center, Rice University. P. Ghosez acknowledge support from F.R.S.-FNRS Belgium under PDR grant T.0128.25 (TOPOTEX). J.J. acknowledges financial support from grant no. PID2022-139776NB-C63 funded by MICIU/AEI/10.13039/501100011033 and by ERDF ‘A way of making Europe’ by the European Union. T.-R.L. and Y.-T.S. acknowledge support from the DOE BES (award no. DE-SC0025423).