GoKawiilASML rejects free-electron laser approach for EUV, sticks with plasma light sources
According to a JPMorgan note cited by Semi Doped, ASML has no plans to adopt free-electron laser (FEL) technology for extreme ultraviolet lithography, despite backing from Elon Musk for that approach. Instead, ASML is continuing to refine its existing laser-produced plasma (LPP) method, aiming to boost source power from around 500W to 1,000W and nearly double the rate of tin droplet generation to 100,000 per second.
GoKawiil's interpretation of the reporting above, not reported fact.
EUV light source power is one of the biggest bottlenecks in chipmaking, directly affecting throughput and cost for advanced semiconductor fabs. ASML's decision to stay with proven laser-plasma technology rather than pursue a riskier particle-accelerator-based alternative signals confidence that incremental engineering gains can meet the industry's roadmap needs without a costly technology overhaul.
- ASML will not adopt free-electron laser tech for EUV despite interest from other firms and Elon Musk
- The company plans to raise its laser-produced plasma source power from 500W to 1,000W
- ASML also aims to nearly double tin droplet generation to 100,000 droplets per second
Source: tomshardware.com — Anton Shilov, 2026-09-18
Published there as: “ASML snubs Elon Musk-backed particle accelerator chipmaking tech — firm doubles down on 1,000W laser-produced plasma systems for chipmaking tools”
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