GoKawiilResearchers demonstrate monolithic, in-situ integrated PbS infrared imager chips
A research team has reported a method for building infrared imaging sensors using lead sulfide (PbS) that are grown and integrated directly onto silicon readout circuitry, rather than assembled from separately fabricated parts. The approach draws on techniques such as epitaxial membrane transfer and low-temperature 2D material growth to achieve cooling-free, monolithic infrared detection on a single chip.
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Infrared imaging has traditionally required costly, bulky hybrid assembly of detector materials with separate readout electronics, often needing cryogenic cooling. Monolithic integration of PbS detectors could, if scaled, lower manufacturing costs and enable smaller, cheaper infrared cameras for consumer devices, wearables and machine vision. The cited body of work on 2D material synthesis and 3D integration suggests a broader industry push toward building diverse semiconductor functions directly onto silicon platforms.
- PbS infrared imagers were integrated monolithically and in situ rather than through hybrid bonding of separate chips.
- The work builds on related research into epitaxial membrane transfer, 2D material growth, and monolithic 3D chip integration.
- Such integration could enable cooling-free, lower-cost infrared sensing suitable for broader consumer and industrial applications.
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Published there as: “Monolithically and in situ integrated PbS infrared imagers”
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