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Samsung details LPDDR5X-PIM chip with in-bank MAC units at Hot Chips 2026

Samsung presented its Processing-in-Memory approach for LPDDR5X-9600 chips, embedding a MAC computation block into each of the 16 DRAM banks while keeping compatibility with standard memory controllers. By computing directly within each bank, the design taps into 614 GB/s of internal bandwidth versus the 76.8 GB/s ceiling of conventional two-bank DRAM access. Each PIM block includes an instruction register file, a source register file for activation vectors, and a scale register, with model weights fetched directly from the attached DRAM bank.

Samsung shows LPDDR5X memory with built-in compute at Hot Chips 2026

Samsung unveiled a 16GB LPDDR5X memory package that runs computation directly inside the chip, achieving 614 GB/s of internal bandwidth between its DRAM banks and compute units. That figure is eight times higher than the 76.8 GB/s the same package can push through its external pins, according to a Tom's Hardware report from the conference.

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