Published on: 2025-08-11 04:13:41
To further explore the factors that make the injection efficiency of 2D materials transistors better than that of silicon transistors, we employed a quasi-2D model30,31 for analysis. As Fig. 2a shows, the structure of this physical model is consistent with that of our fabricated 2D transistor. The x direction is defined as the channel surface to gate vertically and the y direction is defined as source to drain horizontally, where the zero point of the x and y axes is the channel surface and sour
Keywords: ch channel region rm thickness
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