GoKawiilSamsung, TSMC to adopt ASML's High NA EUV machines by 2028 and 2030
ASML announced that Samsung and TSMC will follow Intel in adopting its High NA extreme ultraviolet lithography systems, with Samsung targeting DRAM production by 2028 and TSMC planning advanced node use by 2030. The three chipmakers also launched a joint effort to shift from six-inch to 12-inch photomasks, a change expected to reach advanced production by 2033.
GoKawiil's interpretation of the reporting above, not reported fact.
Intel currently leads in deploying this next-generation lithography, having produced over a million wafers with it on its 18A process, so Samsung and TSMC's commitment marks a major shift in the competitive balance of advanced chipmaking. Larger photomasks could cut costs and improve yields by eliminating the need to stitch together chip features, potentially easing bottlenecks that have driven chip shortages and price pressures across the industry.
- Samsung and TSMC will adopt ASML's High NA EUV tech by 2028 and 2030 respectively.
- Intel remains the only company currently using the technology in production, having built over a million wafers.
- A new 12-inch photomask initiative aims to lower costs and boost yields by 2033.
Intel Core Ultra 7 processor (Panther Lake) — The article highlights Intel's 18A process powering its Core Ultra Series 3 chips, the first built with ASML's High NA EUV tech. Grabbing a laptop with a Core Ultra processor is the most direct way to see what this next-gen lithography actually delivers in everyday computing.
See Intel Core Ultra 7 processor (Panther Lake) on Amazon → Affiliate link — we may earn a commission on purchases, at no extra cost to you. Product picked by AI based on this article; it is not a tested recommendation.Source: engadget.com — Steve Dent, 2026-09-08
Published there as: “Samsung and TSMC hope AMSL's new machines will help address the chip shortage”
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