GoKawiilCXMT begins mass production of 12nm-class DRAM with new G5 process
Chinese memory maker CXMT has started mass-producing DRAM chips built on its fifth-generation process, which shrinks the active-area half-pitch to 11.95nm using quadruple-patterning lithography and storage capacitors with a 45:1 depth-to-width ratio. The first commercial output is a 24Gb LPDDR5X chip offering 50% more capacity than CXMT's prior generation, already shipping in mainstream Chinese flagship phones.
This marks a significant technical leap for China's domestic memory industry, narrowing the gap with established leaders like Samsung, SK hynix, and Micron despite export restrictions on advanced chipmaking tools. Achieving high aspect-ratio capacitors and finer pitches at scale signals CXMT is mastering manufacturing techniques once thought reliant on equipment China has limited access to, which could reshape global DRAM supply and pricing dynamics.
- CXMT's G5 process achieves an 11.95nm active-area half-pitch using quadruple-patterning lithography.
- New 24Gb LPDDR5X chips offer 50% more capacity and are already in Chinese flagship smartphones.
- Capacitor aspect ratio of 45:1 shows manufacturing progress, though still behind the 100:1 needed for sub-10nm DRAM.
Source: tomshardware.com — Anton Shilov, 2026-09-22
Published there as: “China's CXMT hits 12nm-class DRAM milestone”
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