GoKawiilCXMT begins mass production of 5th-gen DRAM using quadruple-patterning lithography
Chinese memory maker CXMT has started mass-producing chips built on its new G5 process, which shrinks the DRAM active-area half-pitch to 11.95nm through quadruple-patterning lithography and uses storage capacitors with a 45:1 depth-to-width ratio. The first products, 24Gb LPDDR5X chips offering 50% more capacity than CXMT's prior generation, are already shipping in two package formats and appearing in mainstream Chinese flagship smartphones.
This marks a significant step in China's push for memory self-sufficiency amid export restrictions from the US and allies, showing CXMT closing the technological gap with SK hynix, Samsung and Micron. While the aspect ratio and pitch figures are impressive, they still trail global leaders who are targeting sub-10nm dimensions and capacitor ratios above 100:1, underscoring both progress and the remaining distance in the race.
- CXMT's G5 process achieves an 11.95nm DRAM half-pitch via quadruple-patterning lithography
- New 24Gb LPDDR5X chips deliver 50% more capacity and are already used in Chinese flagship phones
- Despite gains, CXMT's capacitor aspect ratio of 45:1 still lags rivals targeting beyond 100:1 for future nodes
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Published there as: “China's CXMT hits 12nm-class DRAM milestone — new 5th-gen DRAM tech uses quadruple-patterning to boost die capacity by 50%”
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