GoKawiilResearchers grow wafer-scale p-type boron carbon nitride with high carrier mobility
A multi-institution research team reports achieving wafer-scale epitaxial growth of p-type boron carbon nitride (BCN) that exhibits high carrier mobility. The work involved collaborators from Japanese and Taiwanese institutions, including support from JSPS, JST, Academia Sinica and Taiwan's NSTC, with computational resources provided by Taiwan's National Center for High-performance Computing.
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High-mobility p-type BCN grown at wafer scale could be significant for semiconductor and optoelectronic applications, since p-type doping in wide-bandgap materials has historically been difficult to achieve efficiently. The breadth of institutional and funding involvement suggests this is viewed as a foundational materials-science advance that could enable further device research, though practical applications would depend on further studies not detailed here.
- Team achieved wafer-scale epitaxial growth of p-type boron carbon nitride with high carrier mobility.
- Research was a collaboration across Japanese and Taiwanese institutions, backed by JSPS, JST, Academia Sinica and NSTC funding.
- Advance in p-type doping of BCN could support future work on wide-bandgap semiconductor devices.
Source: nature.com — Tseng, 2026-09-30
Published there as: “Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride”
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