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P Type Semiconductor

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Researchers grow wafer-scale p-type boron carbon nitride with high carrier mobility

A multi-institution research team reports achieving wafer-scale epitaxial growth of p-type boron carbon nitride (BCN) that exhibits high carrier mobility. The work involved collaborators from Japanese and Taiwanese institutions, including support from JSPS, JST, Academia Sinica and Taiwan's NSTC, with computational resources provided by Taiwan's National Center for High-performance Computing.