GoKawiilCornell-led team demonstrates silicon-doped ultra-wide-bandgap (AlGa)2O3 semiconductor at 7 eV
Researchers from Cornell University and collaborating institutions have fabricated a silicon-doped alpha-phase aluminum gallium oxide semiconductor with a bandgap of approximately 7 electron volts. The work, supported by multiple US funding agencies including AFOSR, AFRL and NSF, demonstrates controlled doping of this ultra-wide-bandgap material system.
GoKawiil's interpretation of the reporting above, not reported fact.
A 7 eV bandgap places this material among the widest-bandgap semiconductors demonstrated with controllable doping, which could position it for extreme high-power, high-voltage or deep-ultraviolet electronic and optoelectronic applications beyond the reach of silicon or even gallium nitride and gallium oxide. Achieving reliable doping in such wide-bandgap oxides has historically been difficult, so the demonstration suggests progress toward practical devices, though translating lab-scale material results into working transistors or diodes typically requires further engineering.
- Silicon doping was used to create a functional semiconductor based on alpha-(AlxGa1-x)2O3 with a measured bandgap near 7 eV
- The research involved multiple US universities and was funded by AFOSR, AFRL, NSF and other federal programs
- Ultra-wide-bandgap materials like this are of interest for high-power and extreme-condition electronic applications
Source: nature.com — Steele, 2026-10-07
Published there as: “A 7-eV bandgap semiconductor based on silicon-doped α-(Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>)<sub>2</sub>O<sub>3</sub>”
Read the original report → The summary and analysis above are GoKawiil's own, written from reporting by the source above. Facts and quotes belong to the original publisher.