GoKawiilCornell-led team demonstrates silicon-doped ultra-wide-bandgap (AlGa)2O3 semiconductor at 7 eV
Researchers from Cornell University and collaborating institutions have fabricated a silicon-doped alpha-phase aluminum gallium oxide semiconductor with a bandgap of approximately 7 electron volts. The work, supported by multiple US funding agencies including AFOSR, AFRL and NSF, demonstrates controlled doping of this ultra-wide-bandgap material system.