GoKawiilResearchers detail method for precisely controlled growth of 2D MoS2 semiconductors
A research team describes a metal-organic chemical vapor deposition (MOCVD) process that grows monolayer MoS2 and MoS2-MoSe2 superlattices with spatially controlled nucleation, using an etching-flux barrier patterned via electron-beam lithography on sapphire or SiO2 substrates. The technique relies on tuning gas flow rates, temperature and pressure, with HfO2 or ZrO2 barriers defining where crystal growth begins.
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Precise control over where 2D material nucleates could help manufacturers produce more uniform, defect-controlled semiconductor layers for future electronics, potentially easing a key bottleneck in scaling up 2D material fabrication. The use of standard lithography tools suggests the approach could be compatible with existing semiconductor fabrication infrastructure, though broader industrial adoption would still require further validation.
- The method uses MOCVD with etching-flux barriers to control nucleation sites of monolayer MoS2.
- Barriers made of HfO2 or ZrO2 are patterned via electron-beam lithography to direct crystal growth location.
- The process also enables growth of MoS2-MoSe2 lateral superlattices by alternating precursor gas supply.
Source: nature.com — Park, 2026-10-07
Published there as: “Spatially deterministic nucleation of 2D semiconductors by etching flux”
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