GoKawiilResearchers detail method for precisely controlled growth of 2D MoS2 semiconductors
A research team describes a metal-organic chemical vapor deposition (MOCVD) process that grows monolayer MoS2 and MoS2-MoSe2 superlattices with spatially controlled nucleation, using an etching-flux barrier patterned via electron-beam lithography on sapphire or SiO2 substrates. The technique relies on tuning gas flow rates, temperature and pressure, with HfO2 or ZrO2 barriers defining where crystal growth begins.