Micron drops 4F² DRAM architecture after 20 years of development
Micron CTO Scott DeBoer said the company has decided not to pursue 4F² DRAM cell technology, which it invented, citing increased manufacturing complexity and cost without meaningful density gains. The announcement came during a company event, diverging from rivals Samsung and SK hynix, who reportedly still include 4F² designs in their roadmaps according to TechInsights.
GoKawiil's interpretation of the reporting above, not reported fact.
The 4F² cell architecture was expected to cut DRAM cell area by a third versus today's 6F² designs, so abandoning it suggests Micron is betting its cost and performance roadmap can advance through other means, such as new materials or process techniques. This mirrors Micron's earlier decision to delay EUV adoption, which it managed without losing competitiveness, so the move could again set it apart strategically from Samsung and SK hynix if their 4F² efforts eventually pay off or fail.
- Micron will not pursue 4F² DRAM despite inventing and researching it for two decades.
- The company cites manufacturing complexity, cost, and scaling limits as reasons for dropping it.
- Samsung and SK hynix reportedly still plan to use 4F² designs, diverging from Micron's roadmap.
Source: tomshardware.com — Anton Shilov, 2026-10-22
Published there as: “Micron pulls the plug on future 4F² DRAM after two decades of research in dramatic shift”
Read the original report → The summary and analysis above are GoKawiil's own, written from reporting by the source above. Facts and quotes belong to the original publisher.