GoKawiilResearchers demonstrate current-driven switching in antiferromagnetic tunnel junctions
A research team built nanoscale all-antiferromagnetic tunnel junctions using PtMn3|MgO|PtMn3 layers and showed they can be switched by an electric current via a newly identified effect called octupole-driven spin-transfer torque (OTT). The devices achieved a tunnelling magnetoresistance of 363% at room temperature, with switching current densities around 10 MA per square centimetre.