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Power Semiconductors

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Infineon produces first functional 300mm silicon carbide power devices

Infineon Technologies said it has processed 300-millimeter silicon carbide wafers into functional power devices at its Villach, Austria fab, using existing silicon manufacturing equipment. The company says it is the first to achieve this in a full-scale fab setting, and plans to publicly display the wafer at electronica in Munich starting November 10, 2026.