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Silicon Carbide

2 GoKawiil briefs on this topic

Solid-state transformers gain traction as AI data centers drive demand

Rising electricity demand from AI data centers is spurring investment in solid-state power transformers, which use semiconductor switching instead of the century-old copper-coil design of conventional transformers. Unlike traditional units, which are hand-built and face multi-year delivery backlogs, solid-state versions can be mass-produced using materials like silicon carbide, making them smaller, lighter, and modular. Tech companies building AI infrastructure are especially drawn to them because they suit the direct current power setups increasingly used to run dense racks of AI chips.

Kyoto University's SiC transistor design fixes leakage and voltage drift at 600°C

Researchers at Kyoto University led by Mitsuaki Kaneko, Shunya Shibata, and Tsunenobu Kimoto built a silicon carbide transistor that operates at 600°C using standard ion implantation, the same doping process used in commercial chip fabs. Their bottom-gate, double-well design narrowed the gap between designed and measured threshold voltage to under 0.1V at 400°C, a sharp improvement from the more than 2V drift seen in conventional layouts, while also curbing substrate leakage as temperatures rise.