SK hynix begins construction on $4B HBM packaging plant in Indiana
SK hynix held a groundbreaking ceremony this week for its first U.S.-based HBM packaging and testing facility, located in West Lafayette, Indiana. The $4 billion site will package HBM stacks using DRAM wafers made in South Korea, with volume production of next-generation HBM memory expected in the second half of 2029, roughly a year later than originally planned.
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HBM is a critical bottleneck component for AI accelerators, and having U.S.-based packaging shortens feedback loops between SK hynix and American chipmakers like Nvidia. It also signals a shift toward geographically diversifying advanced memory supply chains amid rising demand for custom AI memory solutions.
- SK hynix's Indiana site will package, not fabricate, HBM DRAM wafers
- Volume production of next-gen HBM is slated for late 2029, delayed by about a year
- The $4B facility will employ roughly 1,000 people and include an R&D testbed for future packaging tech
SK hynix Platinum P41 NVMe SSD — If SK hynix's memory ambitions caught your eye, its consumer-facing Platinum P41 is the same brand's flagship PCIe 4.0 NVMe drive for desktops and laptops. It's a straightforward upgrade for anyone building a machine to run local AI models or big games that need fast storage.
See SK hynix Platinum P41 NVMe SSD on Amazon → Affiliate link — we may earn a commission on purchases, at no extra cost to you. Product picked by AI based on this article; it is not a tested recommendation.Source: tomshardware.com — Anton Shilov, 2026-08-28
Published there as: “SK hynix breaks ground on the first HBM plant in the US, bringing key AI component production to the States — says production starts in 2029”
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