GoKawiilGlobalFoundries to launch 7nm-class FDX Fusion FD-SOI node in 2028
GlobalFoundries announced FDX Fusion, a new 7nm-class fabrication process based on planar fully-depleted silicon-on-insulator (FD-SOI) transistors rather than FinFETs. The company says it will offer more than double the transistor density of its earlier 22FDX node and will target automotive, edge AI, industrial and sensor applications. Production is planned to start at GlobalFoundries' Dresden facility in 2028, developed with input from CEA-Leti's FD-SOI research.
GoKawiil's interpretation of the reporting above, not reported fact.
GlobalFoundries exited leading-edge FinFET development in 2018, so this marks a return to advancing cutting-edge process technology, albeit via a different transistor architecture suited to low-power, cost-sensitive markets rather than peak performance chips. The lack of disclosed specifics like gate pitch or actual transistor density makes it hard to compare FDX Fusion directly against FinFET or GAA nodes from rivals like TSMC or Samsung. CEA-Leti's involvement suggests continued European interest in FD-SOI as a differentiated manufacturing path outside the mainstream FinFET/GAA race.
- FDX Fusion is GlobalFoundries' new 7nm-class node using FD-SOI rather than FinFET transistors.
- Production is slated to begin at the Dresden, Germany fab in 2028.
- The node targets automotive, edge AI, industrial and sensor markets prioritizing power efficiency over raw performance.
Source: tomshardware.com — Anton Shilov, 2026-10-12
Published there as: “GlobalFoundries unveils 7nm-class FDX Fusion node — comes 7 years after firm abandoned FinFET”
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