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GlobalFoundries details FDX Fusion planar FD-SOI process targeting 7nm-class performance by 2030

GlobalFoundries VP Sudipto Bose outlined the company's FDX Fusion technology, an FD-SOI-based process using advanced planar transistors to reach 7nm-class performance without EUV lithography. Bose said the process offers 8nm-class logic density, with commercial production planned to start in 2028 and high-volume manufacturing targeted for 2030.

GlobalFoundries to launch 7nm-class FDX Fusion FD-SOI node in 2028

GlobalFoundries announced FDX Fusion, a new 7nm-class fabrication process based on planar fully-depleted silicon-on-insulator (FD-SOI) transistors rather than FinFETs. The company says it will offer more than double the transistor density of its earlier 22FDX node and will target automotive, edge AI, industrial and sensor applications. Production is planned to start at GlobalFoundries' Dresden facility in 2028, developed with input from CEA-Leti's FD-SOI research.

GlobalFoundries to make silicon interposers for TSMC's CoWoS in $2B deal

GlobalFoundries and TSMC signed a five-year, $2 billion manufacturing agreement under which GlobalFoundries will produce silicon interposers for TSMC's CoWoS-S advanced packaging at its Malta, NY fab. Volume production is set to ramp in the first half of 2028, giving TSMC a U.S.-based source for these components.

GlobalFoundries expands SiGe chip output for Marvell's optical networking push

GlobalFoundries and Marvell Technology have extended their manufacturing partnership, with GlobalFoundries boosting silicon germanium (SiGe) production capacity at its Burlington, Vermont facility. The multi-year deal targets components used in pluggable optical transceivers, near-packaged optics, and co-packaged optics, technologies that data centers need to move data faster than copper wiring allows.