GoKawiilGlobalFoundries details FDX Fusion planar FD-SOI process targeting 7nm-class performance by 2030
GlobalFoundries VP Sudipto Bose outlined the company's FDX Fusion technology, an FD-SOI-based process using advanced planar transistors to reach 7nm-class performance without EUV lithography. Bose said the process offers 8nm-class logic density, with commercial production planned to start in 2028 and high-volume manufacturing targeted for 2030.
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By avoiding EUV tools, GlobalFoundries could offer a lower-cost manufacturing path for chipmakers who don't need the absolute smallest transistor geometries, potentially appealing to automotive and IoT customers already using its FD-SOI lines. This positions the company as pursuing a differentiated strategy rather than directly competing with TSMC and Samsung on leading-edge FinFET nodes.
- FDX Fusion uses FD-SOI with planar transistors to reach 7nm-class performance without EUV lithography
- GlobalFoundries targets commercial production in 2028 and high-volume manufacturing by 2030
- The process claims 8nm-class logic density and builds on GlobalFoundries' existing FD-SOI customer base
Source: tomshardware.com — Anton Shilov, 2026-11-06
Published there as: “GlobalFoundries VP details FDX Fusion technology, sporting 7nm-class performance without the need for EUV tools — company targets 2030 for high-volume manufacturing, with planar transistors in tow”
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