GoKawiilCXMT to launch first 4F² DRAM as server DDR5 RDIMM by year-end
CXMT president Cao Kanyu said the Chinese memory maker plans to ship its first 4F²-based product, a server DDR5 RDIMM, before year-end, though speeds and capacities remain unannounced. The chip uses a denser vertical-transistor cell layout, called Vertical Surrounded Gate, that shrinks cell area roughly one-third versus current 6F² designs, and CXMT says it holds over 300 patent families related to the technology.
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Moving to 4F² cell architecture could let CXMT pack more capacity per die, narrowing a longstanding density gap with Samsung, SK Hynix and Micron. The announcement comes alongside other signs of momentum—mass production of its G5 platform and a rising 9.5% share of global DRAM revenue in Q2, per TrendForce—suggesting the company is positioning itself as a more serious global competitor rather than just a domestic supplier.
- CXMT's first 4F² product will be a server DDR5 RDIMM targeted for release by end of year.
- The design uses vertical transistors (VSG) to cut cell footprint by about a third versus 6F² cells.
- CXMT's DRAM revenue share rose to 9.5% in Q2 2025, ranking fourth globally per TrendForce.
Source: tomshardware.com — Shane Downing, 2026-10-13
Published there as: “CXMT president says company’s first 4F² DRAM will be a server DDR5 RDIMM due by year-end”
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