GoKawiilResearchers Detail Hydrogen-Terminated Diamond Doping Technique for Power Transistors
Scientists describe a surface transfer doping method in which a single-crystal diamond wafer's surface is terminated with a single atomic layer of hydrogen, giving it negative electron affinity. This causes electrons to move from the diamond into acceptor species at the surface, creating a dense two-dimensional hole gas within a few nanometers of the surface that provides p-type conductivity without altering the diamond's bulk properties.
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Because this approach avoids ion implantation or lattice substitution, it could reduce the defects and carrier scattering typically introduced by conventional semiconductor doping methods. Researchers suggest this makes the technique attractive for high-power, high-frequency, and radiation-hard electronics, potentially enabling diamond-based transistors that outperform silicon or silicon carbide in extreme environments.
- Hydrogen termination gives diamond surfaces negative electron affinity, enabling charge transfer doping.
- The method creates a two-dimensional hole gas near the surface, yielding p-type conductivity.
- Avoiding implantation preserves diamond's purity and thermal properties, aiding high-power device development.
Source: df.com, 2026-10-23
Published there as: “Diamond Transistor”
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