Researchers Detail Hydrogen-Terminated Diamond Doping Technique for Power Transistors
Scientists describe a surface transfer doping method in which a single-crystal diamond wafer's surface is terminated with a single atomic layer of hydrogen, giving it negative electron affinity. This causes electrons to move from the diamond into acceptor species at the surface, creating a dense two-dimensional hole gas within a few nanometers of the surface that provides p-type conductivity without altering the diamond's bulk properties.