CXMT reportedly planning 3D NAND R&D line at second Beijing fab
According to Reuters sources, Chinese DRAM maker CXMT is considering building an experimental 3D NAND production line at its planned second facility near Beijing, which has yet to break ground. The company has also set up a Beijing research institute reportedly working on NAND flash development, and has discussed potential NAND supply with at least one prospective customer targeting AI storage products. CXMT has not officially confirmed any of these NAND ambitions.