GoKawiilCXMT reportedly planning 3D NAND R&D line at second Beijing fab
According to Reuters sources, Chinese DRAM maker CXMT is considering building an experimental 3D NAND production line at its planned second facility near Beijing, which has yet to break ground. The company has also set up a Beijing research institute reportedly working on NAND flash development, and has discussed potential NAND supply with at least one prospective customer targeting AI storage products. CXMT has not officially confirmed any of these NAND ambitions.
GoKawiil's interpretation of the reporting above, not reported fact.
If confirmed, this would push CXMT beyond its core DRAM business into direct competition with rival YMTC, mirroring a broader trend of Chinese memory firms trying to match Micron, Samsung and SK hynix by offering both DRAM and NAND. The move signals China's push toward full-spectrum memory self-sufficiency, though any commercial output remains years away given the fab hasn't even started construction.
- CXMT is reportedly planning a 3D NAND R&D line at an unbuilt second Beijing fab.
- Mass production, if it happens, is likely at least two to three years off.
- The plan would mark CXMT's expansion beyond DRAM into YMTC's NAND territory.
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Published there as: “China's premier memory maker CXMT eyes producing flash for SSDs, report claims — 3D NAND research and development line rumored for its second manufacturing facility near Beijing”
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