GoKawiil
Tech News
A Munich Regional Court ruled on September 18 that Micron infringed two YMTC utility model patents covering 3D NAND technology, granting injunctions with 10-year protection terms. Three other related cases in the same filing were adjourned. Micron says it disputes the ruling and has filed an appeal to the Munich Higher Regional Court.
According to Reuters sources, Chinese DRAM maker CXMT is considering building an experimental 3D NAND production line at its planned second facility near Beijing, which has yet to break ground. The company has also set up a Beijing research institute reportedly working on NAND flash development, and has discussed potential NAND supply with at least one prospective customer targeting AI storage products. CXMT has not officially confirmed any of these NAND ambitions.
Modern flash storage relies on NAND memory cells that trap electrical charge, with newer 3D NAND designs stacking cells vertically and packing multiple bits per cell to boost capacity while lowering cost per gigabyte. These improvements have made flash ideal for SSDs and portable devices, since it lacks the moving parts of hard drives, giving lower latency and better durability. However, flash remains fundamentally different from RAM, serving as persistent storage rather than the fast temporary memory a system needs while running.