GoKawiilMicron's G11 3D NAND to use wafer bonding, ship in late 2027
Micron announced its next-generation G11 3D NAND will enter mass production in the second half of 2027, roughly doubling bit density versus its current G9 generation while boosting I/O speeds by up to 50% and cutting per-bit data transfer energy by more than 25%. CTO Scott DeBoer said G11 will adopt wafer-on-wafer bonding technology, a manufacturing approach previously used by YMTC, exceeding 400 layers.
GoKawiil's interpretation of the reporting above, not reported fact.
Adopting wafer-on-wafer bonding suggests Micron sees the technique as now cost-effective enough to compete at scale, which could narrow gaps with rivals like Kioxia and Samsung in density and performance. The density and efficiency gains, if realized, could position Micron's NAND favorably for AI-driven storage demands that require higher bandwidth and lower power draw.
- G11 3D NAND targets mass production in 2H 2027 with over 400 layers.
- Wafer-on-wafer bonding is central to achieving density and performance gains.
- Expected gains include ~2x bit density, 50% faster I/O, and 25%+ lower energy per bit versus G9.
Crucial T705 NVMe SSD — Micron's consumer brand Crucial uses Micron's own NAND and controller tech, so it's a great way to see the company's storage innovations in action today. If you're excited about Micron's next-gen 3D NAND roadmap, grabbing one of their current high-performance drives is a tangible way to experience their engineering now while you wait for G11 to arrive.
See Crucial T705 NVMe SSD on Amazon → Affiliate link — we may earn a commission on purchases, at no extra cost to you. Product picked by AI based on this article; it is not a tested recommendation.Source: tomshardware.com — Anton Shilov, 2026-10-23
Published there as: “Micron's next-generation 3D NAND to double bit density with over 400 layers, offering extreme performance”
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