Tech News
← Home  ·  All topics

High-Bandwidth Memory

4 GoKawiil briefs on this topic

Intel and SK Hynix explore U.S. memory chip manufacturing partnership

Reuters reported that SK Hynix is in early talks with Intel to produce memory chips in the United States, potentially through leasing space at Intel's Ohio plant or forming a joint venture involving cloud companies. Shares of both firms rose in premarket trading following the report, though sources cautioned no final decisions have been made.

Kepler Computing exits stealth with new 3D memory chip architecture

Kepler Computing, a seven-year-old San Jose startup, has emerged from stealth mode claiming a novel 3D-stacking method and proprietary material can boost memory chip density without relying on costly EUV lithography. The approach applies to both high-bandwidth memory used in AI systems and SRAM cache found in CPUs and GPUs, and can reportedly be built using existing fabrication plants rather than requiring new facilities.

Samsung unveils zHBM, memory stacked directly atop AI chips

Samsung Electronics showed mockups of two new 3D memory designs, zHBM and zNAND-O, at the FMS 2026 conference in California. zHBM vertically stacks high-bandwidth memory directly on top of AI accelerator chips along the z-axis, cutting the distance data travels between memory and processor compared to today's side-by-side layouts.

SK Hynix breaks ground on $4 billion HBM packaging plant in Indiana

SK Hynix held a groundbreaking ceremony at Purdue University in West Lafayette, Indiana, for its first U.S. facility, a $4 billion plant dedicated to packaging high-bandwidth memory chips. CEO Kwak Noh-Jung said the site will become a key American production base for HBM by 2030, with its first cleanroom expected to open in October 2028, though actual chip manufacturing will still occur in South Korea and China.