China's Institute of Microelectronics (IMECAS) says it has completed early process integration for stacked-nanosheet gate-all-around transistors built entirely with immersion DUV lithography, avoiding EUV tools that Chinese fabs cannot access. The devices reportedly achieved Ion/Ioff ratios above the 5×10⁵ threshold needed to prove effective gate control over the nanosheet stack. However, IMECAS has not released key figures like gate pitch, transistor density, or nanosheet dimensions needed to compare it to actual 3nm-class chips from TSMC or Samsung.
tomshardware.com
· 2026-09-21
A donor grant received in summer 2025 has enabled organizers to begin indexing the long-stored collection of the former Computer Museum of America and San Diego Computer Museum, which has sat in the basement of SDSU's Love Library for over two decades. The archive includes not just vintage computers and hardware but magazines, newsletters, software, books and manuals documenting the rise of the Information Age. Organizers are also launching fundraising and marketing efforts to raise awareness of the collection's existence and value.
computer-museum.org
· 2026-08-31
A technology explainer walks through the history of the transistor, starting with the electric relay invented in 1835 for telegraph systems. It explains how relays used a small current to control a larger one, solving signal-loss problems over long telegraph wires, laying groundwork for the switching logic that transistors would later perform electronically.
wired.com
· 2026-08-23
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