GoKawiilMicron outlines wafer bonding, High-NA EUV roadmap for future DRAM nodes
Micron has dropped 4F2 memory cells from its roadmap and instead plans to introduce wafer bonding starting with its 1ε DRAM process, following the 1δ node due for volume production in late 2027. For later nodes, codenamed zeta angstrom and eta angstrom, Micron says it will adopt High-NA EUV lithography and new materials to keep shrinking DRAM cells. CTO Scott DeBoer said the company is also developing 3D DRAM alongside new memory types like vertical HBM and vertical edge inference memory for direct integration atop processors.