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Samsung unveils zHBM, memory stacked directly atop AI chips

Samsung Electronics showed mockups of two new 3D memory designs, zHBM and zNAND-O, at the FMS 2026 conference in California. zHBM vertically stacks high-bandwidth memory directly on top of AI accelerator chips along the z-axis, cutting the distance data travels between memory and processor compared to today's side-by-side layouts.