GoKawiilTSMC to adopt High-NA EUV lithography for volume production in 2030
TSMC has confirmed plans to bring High-NA EUV lithography, using 0.55 numerical aperture optics, into high-volume manufacturing by 2030, likely for its A10 or A11 nodes. The company plans to use standard 6x6-inch photomasks initially, followed by a pilot line for larger 6x12-inch photomasks in 2031, aiming for full production with those masks by 2033.