GoKawiilSamsung explores moving memory controller onto HBM base die to curb power growth
Samsung presented plans at Hot Chips 2026 to rethink High Bandwidth Memory design by fabricating the base die on a 4nm logic process instead of a DRAM node, starting with HBM4 and HBM4E. This logic-node shift reduces power consumption and frees up unused base die area, which Samsung is now exploring ways to use, including a first phase that would integrate the memory controller directly onto the base die.