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Photomasks

2 GoKawiil briefs on this topic

Samsung, TSMC to adopt ASML's High NA EUV machines by 2028 and 2030

ASML announced that Samsung and TSMC will follow Intel in adopting its High NA extreme ultraviolet lithography systems, with Samsung targeting DRAM production by 2028 and TSMC planning advanced node use by 2030. The three chipmakers also launched a joint effort to shift from six-inch to 12-inch photomasks, a change expected to reach advanced production by 2033.

Intel processes over one million High-NA EUV wafers, exceeding industry's combined total

Intel says it has run more than one million 300-mm wafers through its High-NA EUV scanners since assembling its first tool roughly two and a half years ago. The company is currently using these tools, including EXE:5000 and EXE:5200B systems, to produce Panther Lake chips on its 18A process, while also developing larger 6x12-inch photomasks that would let High-NA tools expose full-size chip fields without needing to stitch two half-fields together.